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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Low level injection ： ウィキペディア英語版 Low level injection Low level injection conditions for a P-N junction refers to the state where the number of minority carriers generated are small compared to the majority carriers of the material. Essentially, the semiconductor's majority carrier concentration will remain (relatively) unchanged, while the minority carrier concentration sees a large increase. In this condition minority carrier recombination rates are linear.〔Jenny Nelson, The Physics of Solar Cells, Imperial College Press, UK, 2007 pp. 266-267〕 The following equation must be satisfied for a semiconductor under carrier injection conditions, where $n$ is the number of electrons, $\backslash Delta\; n$ is the excess carriers injected into the semiconductor and $n\_0$ is the equilibrium concentration of electrons in the semiconductor: :$n=\backslash Delta\; n+n\_0$ The following relation must also be true, because for every electron injected a hole must also be created to keep a balance of charge: :$\backslash Delta\; n=\backslash Delta\; p$ The assumption of low level injection can be made regarding an n-type semiconductor, which affects the equations in the following way: :$\backslash Delta\; n\backslash ll\; N\_D$ : Therefore $n=N\_D$ and $p=\backslash Delta\; p+p\_0$. In comparison a semiconductor in high injection means that the number of generated carriers is large compared to the background doping density of the material. In this condition minority carrier recombination rates are proportional to the number of carriers squared〔R. R. King, R. A. Sinton, and R. M. Swanson, Doped Surfaces in one sun, point-contact solar cells, Appl. Phys. Lett. 54 (15), 1989 pp. 1460-1462〕 ==References== 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Low level injection」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.